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| Philips Semiconductors Product specification Rectifier diodes ultrafast FEATURES * Low forward volt drop * Fast switching * Soft recovery characteristic * High thermal cycling performance * Low thermal resistance BYV29X-600 SYMBOL QUICK REFERENCE DATA VR = 600V k 1 a 2 VF 1.03 V IF(peak) = 7 A trr 60 ns GENERAL DESCRIPTION Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV29X-600 is supplied in the conventional leaded SOD113 (SOT186a) package. PINNING PIN 1 2 tab DESCRIPTION cathode anode isolated SOD113 (SOT186a) case 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage square wave; = 0.5; Tmb 100 C Repetitive peak forward current t = 25 s; = 0.5; Tmb 100 C Non-repetitive peak forward t = 10 ms current. t = 8.3 ms sinusoidal; with reapplied VRRM(max) Storage temperature Operating junction temperature Average forward current1 CONDITIONS MIN. -40 MAX. 600 600 600 9 18 70 77 150 150 UNIT V V V A A A A C C Tstg Tj THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heat sink Thermal resistance junction to ambient CONDITIONS MIN. in free air. TYP. 60 MAX. 5.5 UNIT K/W K/W 1 Neglecting switching and reverse current losses. February 2000 1 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from both terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. - BYV29X-600 TYP. MAX. 2500 UNIT V Cisol Capacitance from both terminals f = 1 MHz to external heatsink - 10 - pF ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL VF IR Qs trr Irrm Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Peak reverse recovery current Forward recovery voltage CONDITIONS IF = 8 A; Tj = 150C IF = 8 A IF = 20 A VR = VRRM VR = VRRM; Tj = 100 C IF = 2 A to VR 30 V; dIF/dt = 20 A/s IF = 1 A to VR 30 V; dIF/dt = 100 A/s IF = 10 A to VR 30 V; dIF/dt = 50 A/s; Tj = 100C IF = 10 A; dIF/dt = 10 A/s MIN. TYP. 0.90 1.05 1.30 2.0 0.1 40 50 3.0 3.2 MAX. 1.03 1.25 1.45 50 0.35 70 60 5.5 UNIT V V V A mA nC ns A V February 2000 2 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast BYV29X-600 I dI F dt F 18 16 Forward dissipation, PF (W) 1.9 2.2 2.8 4 Ths(max) (C) a = 1.57 62 84 t 14 rr time 12 10 8 6 106 Q I I s 10% 100% 4 2 0 128 150 0 2 4 6 8 10 Average forward current, IF(AV) (A) 12 R rrm Fig.1. Definition of trr, Qs and Irrm Fig.4. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). I F 1000 trr / ns 10A time 100 VF V VF time Tj = 25 C Tj = 150 C 1A fr 10 10 -diF/dt 100 Fig.2. Definition of Vfr Fig.5. Maximum trr at Tj = 25C and 100C Forward dissipation, PF (W) 20 Ths(max) (C) 100 Cd / pF 15 0.5 10 0.1 tp D = 1.0 67.5 0.2 D = tp/T 95 10 5 T 122.5 0 0 2 4 6 8 10 Average forward current, IF(AV) (A) 12 150 14 1 1 10 VR / V 100 1000 Fig.3. Maximum forward dissipation PF = f(IF(AV)); square wave where IF(AV) =IF(RMS) x D. Fig.6. Typical junction capacitance Cd at f = 1 MHz; Tj = 25C February 2000 3 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast BYV29X-600 10 Irrm / A IF=10A 1000 Qs / nC 10A 2A 10A IF=2A 1 IF=1A 100 0.1 10 25 C 150 C 0.01 1 Tj = 25 C Tj = 100C 10 -dIF/dt (A/us) 100 1 1 -diF / dt 10 100 Fig.7. Maximum Irrm at Tj = 25C and 100C. Fig.9. Maximum Qs at Tj = 25C 30 IF / A Tj=150 C Tj=25 C BYW29 10 Transient thermal impedance, Zth j-hs (K/W) 1 20 0.1 typ 10 max 0.01 P D tp D= tp T t 0 0 0.5 1 VF / V 1.5 2 0.001 1us T 10us 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV29F 10s Fig.8. Typical and maximum forward characteristic IF = f(VF); parameter Tj Fig.10. Transient thermal impedance Zth j-mb= f(tp) February 2000 4 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast MECHANICAL DATA Dimensions in mm Net Mass: 2 g A E P q m T A1 z BYV29X-600 Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-leads TO-220 'full pack' SOD113 D HE j L1 (1) k Q L 1 b1 b e 2 wM c 0 10 scale 20 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.6 4.0 A1 2.9 2.5 b 0.9 0.7 b1 1.1 0.9 c 0.7 0.4 D 15.8 15.2 E 10.3 9.7 e 5.08 HE max. 19.0 j 2.7 2.3 k 0.6 0.4 L 14.4 13.5 L1 (1) m 6.5 6.3 P 3.2 3.0 Q 2.6 2.3 q 2.6 T 2.55 w 0.4 z(2) 0.8 3.3 2.8 Notes 1. Terminals are uncontrolled within zone L1. 2. z is depth of T. OUTLINE VERSION SOD113 REFERENCES IEC JEDEC 2-lead TO-220 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11 Fig.11. SOD113; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". February 2000 5 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast DEFINITIONS Data sheet status Objective specification Product specification Limiting values BYV29X-600 This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 2000 6 Rev 1.100 |
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